PART |
Description |
Maker |
MMG3001NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMG3002NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMA20312BT1 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor
|
MMG3011NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3010NT1 MMG3010NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3009NT108 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3010NT1 |
Heterojunction Bipolar Transistor (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3006NT1 MMG3006NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MT3S111 |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
MMG3003NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier
|
FREESCALE[Freescale Semiconductor, Inc]
|